Report on Models for Nanometer Size MESFETs [ Part-1 ]
Subject: EEE | Topics:

MESFET stands for Metal Semiconductor Field Effect Transistor. Main objective of this report is to focus on Models for Nanometer Size MESFETs. TMESFET offers certain processing and performance advantages, such as low temperature formation of the metal-semiconductor barrier (as compared to a p-n junction made by diffusion or grown process), low resistance and low IR drop along the channel width and good heat dissipation for power devices (the rectifying contact also serve as an efficient thermal contact to heat sink).

Report on Models for Nanometer Size MESFETs [ Part-1 ]

Report on Models for Nanometer Size MESFETs [ Part-2 ]

Related EEE Paper: